Aj. Perry et De. Geist, ON THE RESIDUAL-STRESS PROFILE DEVELOPED IN TITANIUM NITRIDE BY ION-IMPLANTATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 967-971
The effect of gas and metal ion implantation on the residual stress an
d the strain distribution has been studied using glancing incidence pa
rallel beam X-ray diffraction. Monolithic TiN coatings were chosen wit
h very low residual stress as made by chemical vapor deposition onto c
emented carbide. Implants of nitrogen, Ni-Ti dual and Y were made at d
ifferent doses and acceleration energies. The results showed that the
residual stress in the implanted zone was in the range 0.5 GPa tensile
down to -2 GPa compressive, with very large distributions of strain c
orresponding to high dislocation densities or gain comminution, With o
ne exception, the residual stress below the implanted zone became tens
ile up to 1 GPa down to depths of about 2 mu m with some increase in s
train distribution. In the sample implanted with Y at high dose and en
ergy the residual stress is highly compressive (-4 GPa), with a very h
igh degree of strain broadening corresponding to a high degree of diso
rder. Below this zone a tensile stress is developed associated with mo
derate dislocation densities corresponding to a hardening of the mater
ial. At high implantation doses and energies, the high compressive str
ess and high dislocation density may correspond to a condition of over
-implantation causing mechanical damage to the lattice.