PROPERTIES OF DEPTH-PROFILE CONTROLLED BORON-NITRIDE FILMS PREPARED BY ION-BEAM-ASSISTED DEPOSITION

Boron nitride films were prepared by vapor deposition of boron and sim ultaneous bombardment with mixed gas ions of nitrogen and argon in the energy range of 0.2 to 20 keV, The films were prepared on various kin ds of substrates including silicon wafers, tungsten carbide plates and various ceramic plates at a temperature of 400 degrees C. In the synt hesis of the BN films, a boron-rich buffer layer between the substrate and the BN film was formed by energetic nitrogen ion beam bombardment , improving tribological properties such as the depth-profile controll ed layer, The buffer layer improved film adhesion, and chemical stabil ity, thermal stability at elevated temperature and corrosion resistanc e of the BN films also gave good results.