Improved electron-beam ion-trap lifetime measurement of the 1s2s S-3(1) level in N5+ and F7+

Authors
Neill, PA Trabert, E Beiersdorfer, P Brown, GV Harris, CL Utter, SB Wong, KL
Citation
Pa. Neill et al., Improved electron-beam ion-trap lifetime measurement of the 1s2s S-3(1) level in N5+ and F7+, PHYS SCR, 62(2-3), 2000, pp. 141-144
Citations number
20
Categorie Soggetti
Physics
Journal title
PHYSICA SCRIPTA
ISSN journal
02811847 → ACNP
Volume
62
Issue
2-3
Year of publication
2000
Pages
141 - 144
Database
ISI
SICI code
0281-1847(200008/09)62:2-3<141:IEILMO>2.0.ZU;2-C
Abstract
Earlier measurements using a heavy-ion storage ring and an electron beam io n trap (EBIT) for the determination of the N5+ 1s2s S-3(1) level lifetime a re improved upon by new EBIT work. The new result, 3.94 +/- 0.05 ms, agrees with the previous values. but is more precise. A corresponding measurement on F7+ yields a lifetime of 276 +/- 2 mu s The new values corroborate the isoelectronic trend of the most precise data for this isoelectronic sequenc e and thus help distinguish among theoretical predictions.