Radiation defects in n-6H-SiC irradiated with 8 MeV protons

Capacitance methods and electron spin resonance (ESR) were applied to study deep centers in n-6H-SiC irradiated with 8 MeV protons. Schottky diodes an d p-n structures grown by sublimation epitaxy or commercially produced by C REE Inc. (United States) were used. The type of the irradiation-induced cen ters is independent of the material fabrication technology and the kind of charged particles used. Irradiation results in an increase in the total con centration of donor centers. The possible structure of the centers is sugge sted on the basis of data on defect annealing and ESR. (C) 2000 MAIK "Nauka /Interperiodica".