TEM structural studies of undoped and Si-doped GaN grown on Al2O3 substrate

Authors
Cherkashin, NA Bert, NA Musikhin, YG Novikov, SV Cheng, TS Foxon, CT
Citation
Na. Cherkashin et al., TEM structural studies of undoped and Si-doped GaN grown on Al2O3 substrate, SEMICONDUCT, 34(8), 2000, pp. 867-871
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
34
Issue
8
Year of publication
2000
Pages
867 - 871
Database
ISI
SICI code
1063-7826(2000)34:8<867:TSSOUA>2.0.ZU;2-C
Abstract
Transmission electron microscopy was used to study the microstructure of Ga N films undoped or Si-doped to 10(17) or 10(18) cm(-3) and grown by molecul ar-beam epitaxy on (0001) Al2O3 substrate without nitridation or a buffer l ayer. Defect structures including inversion domains, nanopipes, and (0001) stacking faults were studied. The influence of Si doping on the threading d islocation density and the dimensions of GaN grains bounded by inversion do mains was assessed. Smoothing of the steplike morphology of the GaN film su rface occurs at a Si concentration of 10(17) cm(-3). (C) 2000 MAIK "Nauka/I nterperiodica".