Variable-range-hopping conduction via indium impurity states in Pb0.78Sn0.22Te solid solution

Citation
Sa. Nemov et al., Variable-range-hopping conduction via indium impurity states in Pb0.78Sn0.22Te solid solution, SEMICONDUCT, 34(8), 2000, pp. 889-890
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
34
Issue
8
Year of publication
2000
Pages
889 - 890
Database
ISI
SICI code
1063-7826(2000)34:8<889:VCVIIS>2.0.ZU;2-N
Abstract
The Seebeck coefficient S was measured in a wide temperature range T < 100 K in Pb0.78Sn0.22Te solid solutions doped with 3 at. % of In, with addition al Cl doping of up to 3 at. %. The temperature derivative partial derivativ e\S\/partial derivative T changes its sign from negative to positive below 100 K. Theoretical estimations in terms of hopping conduction via highly lo calized indium-related states show that the transition to variable-range-ho pping conduction must occur at temperatures of about 50-100 K, in agreement with the obtained experimental data. (C) 2000 MAIK "Nauka/Interperiodica".