Spectral shift of photoluminescence bands of the (SiC)(1-x)(AlN)(x) epitaxial films due to laser annealing

The effect of laser annealing on the photoluminescence properties of (SiC)( 1-x)(AlN)(x) epitaxial films was studied. It was proposed that annealing ca uses the displacement of the Al and N atoms from their lattice sites and th e formation of Al-Si-N-C donor-acceptor pairs acting as the luminescence ce nters. According to this model, the increase in the annealing time is accom panied by the formation of donor-acceptor pairs with the shortest interatom ic distances at the expense of associations of the distant defects and by a shift of the respective photoluminescence band to the high-energy spectral region. (C) 2000 MAIK "Nauka/Interperiodica".