Hole concentration and thermoelectric figure of merit for Pb1-xSnxTe : Te solid solutions

Citation
Gt. Alekseeva et al., Hole concentration and thermoelectric figure of merit for Pb1-xSnxTe : Te solid solutions, SEMICONDUCT, 34(8), 2000, pp. 897-901
Citations number
26
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
34
Issue
8
Year of publication
2000
Pages
897 - 901
Database
ISI
SICI code
1063-7826(2000)34:8<897:HCATFO>2.0.ZU;2-2
Abstract
The maximum densities of holes generated by cation vacancies, as well as th ermoelectric parameters of (Pb1-xSnx)(1-y)Te-y solid solutions with tin con tent x in the range from 0.4 to 0.6, were investigated. It is shown that ea ch vacancy produces four holes in the valence band and that only for small x can the concept of doubly charged vacancy be used. The maximum thermoelec tric figure of merit Z is (1.0-1.1) x 10(-3) K-1 at T = 800-850 K. The rela tively high value of Z achieved without doping is due to the high electrica l conductivity provided, first, by the small effective mass of holes and, s econd, by the high electrical activity of the vacancies. (C) 2000 MAIK "Nau ka/Interperiodica".