Tunnel light-emitting Si :(Er,O) diodes with a short rise time of Er3+ electroluminescence under breakdown conditions

Authors
Emel'yanov, AM Sobolev, NA Trishenkov, MA Khakuashev, PE
Citation
Am. Emel'Yanov et al., Tunnel light-emitting Si :(Er,O) diodes with a short rise time of Er3+ electroluminescence under breakdown conditions, SEMICONDUCT, 34(8), 2000, pp. 927-930
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
34
Issue
8
Year of publication
2000
Pages
927 - 930
Database
ISI
SICI code
1063-7826(2000)34:8<927:TLS:DW>2.0.ZU;2-X
Abstract
Si:(Er,O)-based tunnel light-emitting diodes were fabricated and exhibited the shortest ever recorded characteristic rise time for erbium electrolumin escence. This is due to the formation of Er-related centers with an effecti ve excitation cross section for erbium ions of similar to 7 x 10(-16) cm(2) and an excited-state lifetime of similar to 17 mu s. The lifetime of the f irst excited state of erbium ions after turning off the reverse current was measured for the first time; this lifetime is associated with Auger energy transfer to free electrons in the electrically neutral region of the diode . (C) 2000 MAIK "Nauka/Interperiodica".