Band offsets in Zn1-xCdxTe/ZnTe single-quantum-well structures grown by molecular-beam epitaxy on GaAs(001) substrates

ZnTe heteroepitaxial layers and ZnTe/Zn1 - xCdxTe/ZnTe strained quantum-con finement structures grown by molecular-beam epitaxy on GaAs(001) were studi ed by low-temperature cathodoluminescence spectroscopy and current-relaxati on deep-level transient spectroscopy (DLTS). A peak related to electron emi ssion from the ground size-quantization level in the conduction-band was ob served in the DLTS spectra of quantum-confinement structures. The conductio n-band offset parameter Q(C) was determined from the DLTS and cathodolumine scence data. For Zn1-xCdxTe/ZnTe single-quantum-well structures with x = 0. 2-0.22, Q(C) equals 0.82 +/- 0.05. The effect of internal elastic strain on the band offsets and Q(C) at the CdxZn1-xTe quantum well interfaces was ca lculated; the results of calculations agree well with experimental data. (C ) 2000 MAIK "Nauka/Interperiodica".