Citation
A. Chahboun et al., Hot hole transport through Au/n-Si(100) studied by reverse ballistic electron emission microscopy and spectroscopy, SURF SCI, 462(1-3), 2000, pp. 61-67
Citations number
17
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
SURFACE SCIENCE
ISSN journal
00396028
→ ACNP
Volume
462
Issue
1-3
Year of publication
2000
Pages
61 - 67
Database
ISI
SICI code
0039-6028(20000810)462:1-3<61:HHTTAS>2.0.ZU;2-A
Abstract
The Au/n-Si(100) contact has been studied using reverse ballistic electron
emission microscopy and spectroscopy. Two types of localized collector curr
ents have been observed: one, positive corresponding to electron injection
into Si, and the other, negative, associated with hole injection into the s
emiconductor. The comparative trial of BEEM and reverse BEEM images from th
e same area shows this difference to be linked to the interface structure.
Effects of surface roughness on the observed contrasts are also discussed.
(C) 2000 Elsevier Science B.V. All rights reserved.