Particle-size analysis by laser diffraction with a complementary metal-oxide semiconductor pixel array

Citation
Zh. Ma et al., Particle-size analysis by laser diffraction with a complementary metal-oxide semiconductor pixel array, APPL OPTICS, 39(25), 2000, pp. 4547-4556
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Optics & Acoustics
Journal title
APPLIED OPTICS
ISSN journal
00036935 → ACNP
Volume
39
Issue
25
Year of publication
2000
Pages
4547 - 4556
Database
ISI
SICI code
0003-6935(20000901)39:25<4547:PABLDW>2.0.ZU;2-5
Abstract
Existing laser-diffraction instruments that use photodiode detectors have a limited resolution for particle sizing. We attempt the implementation of a complementary metal-oxide semiconductor pixel sensor for particle-size mea surement by laser diffraction. The sensor has unique features: high resolut ion, no blooming, and a wide dynamic range (i.e., direct measurement of the scattering pattern). The calibration of the sensor is based on each pixel. The signal-processing and the inversion schemes for obtaining the I;articl e-size distribution are described. The results indicate an improved size re solution and an increased flexibility of application. (C) 2000 Optical Soci ety of America OCIS cooles: 040.1240, 050.1960, 100.2000, 140.3460, 120.188 0.