Citation
So. Kucheyev et al., Ion-beam-induced porosity of GaN, APPL PHYS L, 77(10), 2000, pp. 1455-1457
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951
→ ACNP
Volume
77
Issue
10
Year of publication
2000
Pages
1455 - 1457
Database
ISI
SICI code
0003-6951(20000904)77:10<1455:IPOG>2.0.ZU;2-8
Abstract
Wurtzite GaN films bombarded with heavy ions (Au-197(+)) show anomalous swe
lling of the implanted region with corresponding volume expansion up to sim
ilar to 50%. Results show that this phenomenon is due to the formation of a
porous layer of amorphous GaN. An important implication of this study for
the fabrication of GaN-based devices is that amorphization of GaN should be
avoided during ion implantation. (C) 2000 American Institute of Physics. [
S0003-6951(00)03136-3].