Electronic structures of polycrystalline ZnO thin films probed by electronenergy loss spectroscopy

Citation
Hc. Ong et al., Electronic structures of polycrystalline ZnO thin films probed by electronenergy loss spectroscopy, APPL PHYS L, 77(10), 2000, pp. 1484-1486
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
77
Issue
10
Year of publication
2000
Pages
1484 - 1486
Database
ISI
SICI code
0003-6951(20000904)77:10<1484:ESOPZT>2.0.ZU;2-V
Abstract
The microstructure of polycrystalline ZnO thin films grown on amorphous fus ed quartz has been studied by transmission electron microscopy and electron energy loss spectroscopy (EELS). The optical functions of the grain and gr ain boundary of ZnO acquired from EELS are compared to elucidate the mechan ism of the formation of self-assemble laser cavities within this material. It is found that the refractive index of the grain boundary is significantl y lower than that of the grain due to the lack of excitonic resonance. This large refractive index difference between the grain and grain boundary sub stantiates the scenario that the formation of laser cavities is caused by t he strong optical scattering facilitated in a highly disordered crystalline structure. In addition, our results also imply that the optical characteri stics of ZnO have very high tolerance on defects. (C) 2000 American Institu te of Physics. [S0003-6951(00)01636-3].