Cl. Canedy et al., Structural and dielectric properties of epitaxial Ba1-xSrxTiO3/Bi4Ti3O12/ZrO2 heterostructures grown on silicon, APPL PHYS L, 77(10), 2000, pp. 1523-1525
We report on the dielectric properties of an epitaxial heterostructure comp
rised of Ba1-xSrxTiO3, Bi4Ti3O12, and (ZrO2)(0.91)(Y2O3)(0.09) grown on sil
icon substrates for potential use in microwave devices. Careful x-ray analy
sis indicates crystallographic alignment of all layers and transmission ele
ctron microscopy and Auger analysis reveals high quality epitaxy with minim
al interdiffusion. The viability of using such heterostructures in actual m
icrowave devices was assessed by incorporating the films in a coupled micro
stripline phase shifter design. The phase shifter devices, operating in the
Ku band, had losses of less than 4 dB with a maximum phase shift of nearly
40 degrees at 40 V. We compare this performance with a (Ba, Sr)TIO3/MgO ph
ase shifter. These results presented represent significant progress towards
integrating ferroelectric films with conventional silicon technology. (C)
2000 American Institute of Physics. [S0003-6951(00)03336-2].