Electron saturation velocity of GaInP deduced in a GaInP/GaAs/GaInP doubleheterojunction bipolar transistor

Authors
Hsin, YM Hsu, ST Fan, CC
Citation
Ym. Hsin et al., Electron saturation velocity of GaInP deduced in a GaInP/GaAs/GaInP doubleheterojunction bipolar transistor, APPL PHYS L, 77(10), 2000, pp. 1538-1539
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
77
Issue
10
Year of publication
2000
Pages
1538 - 1539
Database
ISI
SICI code
0003-6951(20000904)77:10<1538:ESVOGD>2.0.ZU;2-U
Abstract
GaInP/GaAs/GaInP double heterojunction bipolar transistors have been fabric ated for the study of electron saturation velocity (upsilon(sat)) in GaInP. The necessary composite design at the base-collector junction, which effec tively reduces the conduction band spike and avoids the premature Kirk effe ct, enables us to use the Kirk effect to study upsilon(sat). The deduced el ectron saturation velocity in GaInP is similar to 5 x 10(6) cm/sec. (C) 200 0 American Institute of Physics. [S0003-6951(00)02236-1].