GaNAs resonant-cavity avalanche photodiode operating at 1.064 mu m

Authors
Kinsey, GS Gotthold, DW Holmes, AL Campbell, JC
Citation
Gs. Kinsey et al., GaNAs resonant-cavity avalanche photodiode operating at 1.064 mu m, APPL PHYS L, 77(10), 2000, pp. 1543-1544
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
77
Issue
10
Year of publication
2000
Pages
1543 - 1544
Database
ISI
SICI code
0003-6951(20000904)77:10<1543:GRAPOA>2.0.ZU;2-F
Abstract
A resonant-cavity avalanche photodiode using a GaNAs absorption region grow n on GaAs has been demonstrated. The peak quantum efficiency was 59% at 1.0 64 mu m with a full width at half maximum of 11 nm. The absorption coeffici ent was determined to be alpha = 9 x 10(3)/cm at this wavelength. The devic es exhibited gain up to 100 at a low breakdown voltage of 13 V. (C) 2000 Am erican Institute of Physics. [S0003-6951(00)05236-0].