X-RAY-DIFFRACTION AND X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY OF PARTIALLY STRAINED SIGE LAYERS PRODUCED VIA EXCIMER-LASER PROCESSING

Structural properties of graded Si(1-x)Ge-x layers obtained on Si(100) by pulsed laser induced epitaxy were investigated by means of convent ional powder x-ray diffraction and x-ray: photoelectron spectroscopy. The Si(1-x)Ge-x epitaxial layers were formed by pulsed KrF-laser drive n rapid melting and crystallization of thin amorphous Ge layers deposi ted onto the Si(100). The experimental results showed that, by increas ing the number of laser pulses, good quality and partially strained ep itaxial layers could be attained. A Monte Carlo data evaluation algori thm is proposed, which is capable to determine, by the simultaneous fi t of data obtained by x-ray diffraction and x-ray photoelectron spectr oscopy, the strain level as a function of Ge concentration. (C) 1997 A merican Institute of Physics.