DEFECTS IN METAMORPHIC INXAL1-XAS (X-LESS-THAN-0.4) EPILAYERS GROWN ON GAAS SUBSTRATES

Authors
SHIEH JL CHANG MN CHENG YS CHYI JI
Citation
Jl. Shieh et al., DEFECTS IN METAMORPHIC INXAL1-XAS (X-LESS-THAN-0.4) EPILAYERS GROWN ON GAAS SUBSTRATES, Journal of applied physics, 82(1), 1997, pp. 210-213
Citations number
16
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
82
Issue
1
Year of publication
1997
Pages
210 - 213
Database
ISI
SICI code
0021-8979(1997)82:1<210:DIMI(E>2.0.ZU;2-J
Abstract
Defects in Si-doped InxAl1-xAs (0<x<0.4) epilayers on GaAs substrates were systematically investigated by deep-level transient spectroscopy. Three electron traps, ranging from 0.22 to 0.89 eV, were observed in InxAl1-xAs grown by molecular beam epitaxy. Their energy levels can be extrapolated from those in the InxAl1-xAs/InP system. A low-temperatu re-grown buffer layer as well as thermal annealing were found to be ca pable of reducing the defects in the active layer effectively. (C) 199 7 American Institute of Physics.