MEASUREMENT OF DOPING CONCENTRATION IN BORON-DOPED DIAMOND FILM FROM CAPACITANCE SPECTROSCOPY

Schottky barrier structure and metal-insulator-semiconductor structure have been fabricated on boron-doped diamond film samples, which were grown using the microwave enhanced chemical vapor deposition method. B y measuring the capacitance-voltage (CV) spectroscopies of both struct ures, boron acceptor concentration of similar to 10(7) cm(-3) in the d iamond samples has been measured. In the CV measurement, the influence s from interface states, non-boron deep centers, emission/capture time constant distribution of boron accepters and diamond resistance have been considered. It shows that proper ac modulation frequency should b e selected in the measurement. It also shows that, in the measurement of dopant concentration in wide gap semiconductors, the CV measurement of the semiconductor Schottky barrier structure is a better choice, b ecause Ohmic contact problem can be avoided. (C) 1997 American Institu te of Physics.