GROWTH-KINETICS OF FURNACE SILICON OXYNITRIDATION IN NITROUS-OXIDE AMBIENTS

The chemical kinetics and process-property relationships of silicon ox ynitride films grown in nitrous oxide ambients were investigated. Gas phase compositions in the furnace were experimentally determined with mass spectrometry and were found to be within +/- 5% of the ones calcu lated theoretically. Experimental observations in the furnace suggeste d that the reaction between NO and oxygen to form NO2 inside the furna ce was negligible. Silicon oxynitride films were grown at 950 degrees C and atmospheric pressure for times ranging between 30 min and 24 h. Ellipsometry was used to measure the film thickness. The observed thin -film growth was parabolic with time and appeared to saturate after ab out 24 h, that is, significantly slower than the oxynitride growth by rapid thermal processing, Secondary ion mass spectrometry (SIMS) used in the depth profiling of oxynitrides showed a sharp accumulation of n itrogen at the oxynitride-silicon interface. Additional experimental d ata suggested that nitric oxide is the species responsible for nitroge n incorporation at the interface and removal of nitrogen from the bulk film, Mass spectrometric, ellipsometric, and SIMS analyses of furnace silicon oxynitridation in nitrous oxide ambients were used for the de velopment of a model of the process. Model predictions are in agreemen t with all trends of the experimental data obtained. (C) 1997 American Institute of Physics.