I. Koponen et al., SIMULATIONS OF SPUTTERING INDUCED ROUGHENING OF AMORPHOUS DIAMOND FILMS DEPOSITED WITH MASS SEPARATED KILOELECTRONVOLT ION-BEAMS, Journal of applied physics, 82(1), 1997, pp. 488-490
Atomic scale simulations are performed for the ion bombardment induced
roughening of the amorphous diamond films, when the films are deposit
ed by using kiloelectronvolt mass separated ion beams operated in the
upper limit of practical deposition energies up to 20 keV. The results
show that the roughness due to sputtering erosion is by a factor of 3
to 3 larger than roughness observed in experiments. The experimentall
y observed roughness is obtained only when moderate surface relaxation
within the distance of next nearest neighbors is included in the simu
lations. The results suggest that atomic scale relaxation of sputterin
g induced topography occurs during the deposition. (C) 1997 American I
nstitute of Physics.