A new method for thin film deposition - Faced microwave electron cyclotronresonance plasma sources enhanced direct-current magnetron sputtering

Citation
J. Xu et al., A new method for thin film deposition - Faced microwave electron cyclotronresonance plasma sources enhanced direct-current magnetron sputtering, CHIN PHYS L, 17(8), 2000, pp. 586-588
Citations number
5
Categorie Soggetti
Physics
Journal title
CHINESE PHYSICS LETTERS
ISSN journal
0256307X → ACNP
Volume
17
Issue
8
Year of publication
2000
Pages
586 - 588
Database
ISI
SICI code
0256-307X(2000)17:8<586:ANMFTF>2.0.ZU;2-V
Abstract
A new reactive magnetron sputtering system enhanced by the faced microwave electron cyclotron resonance plasma source was designed and amorphous CNx f ilms has been prepared by using this system. The characterization of the fi lms by interference microscopy, atomic force microscopy, and x-ray photoele ctron spectroscopy shows that the deposition rate is strongly affected by t he direct-current bias, and the films are composed by a single carbon nitri de phase and the N/C ratio is 4:3.2, which is close to that of C3N4 (4:3).