Pb surfactant-assisted Co film growth on Cu(111)

Citation
Mc. Xu et al., Pb surfactant-assisted Co film growth on Cu(111), CHIN PHYS L, 17(8), 2000, pp. 595-597
Citations number
17
Categorie Soggetti
Physics
Journal title
CHINESE PHYSICS LETTERS
ISSN journal
0256307X → ACNP
Volume
17
Issue
8
Year of publication
2000
Pages
595 - 597
Database
ISI
SICI code
0256-307X(2000)17:8<595:PSCFGO>2.0.ZU;2-W
Abstract
Surfactant-assisted Co film epitaxy growth on Cu (111) using Pb as a surfac tant was studied by means of Auger electron spectra and synchrotron radiati on photoemission spectra. The results reveal that with increasing the Co th ickness most of the Pb atoms always float on the surface. Compared with 0.7 ML (monolayer) Pb, the Co film with 1.5 ML Pb surfactant has more layer-by -layer growth on Cu(111). The predeposited Pb layer can suppress the intral ayer diffusion on the Cu(111) surface and effectively increase the Co islan d density at the initial stage of Co growth. On the contrary, a Pb-Co surfa ce alloy was found during the Co film growth; this may hinder the interlaye r diffusion of the deposited Co atoms, which is unfavorable to the layer-by -layer growth. The Pb-Co is also considered to be the main reason why some Pb atoms have been buried in the Co films.