Structure and electric properties of InTe1-xSex, In1-xGaxTe, and In1-xTlxTe solid solutions

Authors
Lebedev, AI Michurin, AV Sluchinskaya, IA Demin, VN Munro, I
Citation
Ai. Lebedev et al., Structure and electric properties of InTe1-xSex, In1-xGaxTe, and In1-xTlxTe solid solutions, CRYSTALLO R, 45(4), 2000, pp. 555-559
Citations number
9
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
CRYSTALLOGRAPHY REPORTS
ISSN journal
10637745 → ACNP
Volume
45
Issue
4
Year of publication
2000
Pages
555 - 559
Database
ISI
SICI code
1063-7745(200007/08)45:4<555:SAEPOI>2.0.ZU;2-M
Abstract
The local environment of Ga, Tl, and Se atoms in InTe-based solid solutions have been studied by the method of EXAFS spectroscopy. It is shown that th ese atoms can be regarded as substitutional impurities occupying the In(1), In (2), and Te positions in the InTe structure. Electric measurements show ed that the In1-xGaxTe and InTe1-xSex solid solutions are semiconductors at x > 0.24 and x > 0.15, respectively. (C) 2000 MAIK "Nauka/Interperiodica".