Structural characteristics of multicomponent GaAs-InxGa1-xAs system from double-crystal X-ray diffractometry data

Authors
Afanas'ev, AM Chuev, MA Imamov, RM Lomov, AA
Citation
Am. Afanas'Ev et al., Structural characteristics of multicomponent GaAs-InxGa1-xAs system from double-crystal X-ray diffractometry data, CRYSTALLO R, 45(4), 2000, pp. 655-660
Citations number
7
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
CRYSTALLOGRAPHY REPORTS
ISSN journal
10637745 → ACNP
Volume
45
Issue
4
Year of publication
2000
Pages
655 - 660
Database
ISI
SICI code
1063-7745(200007/08)45:4<655:SCOMGS>2.0.ZU;2-T
Abstract
The article continues a series of publications on the technologically impor tant multilayer InxGa1-xAs-GaAs/GaAs system with the 3-, 6-, and 9 nm-thick layers (quantum wells). The collimation system of the incident beam is imp roved. The dimensions of quantum wells and the interfaces between these wel ls are determined. The qualitative picture of quantum well "spreading" is d escribed. The experimental diffraction reflection curves are measured from three different parts of the specimen. Their analysis shows how homogeneous the structure grown is. (C) 2000 MAIK "Nauka/Interperiodica".