Structures and optical properties of defects correlated with photo-inducedrefractive index changes in Ge-doped SiO2 glass

Authors
Fujimaki, M Ohki, Y
Citation
M. Fujimaki et Y. Ohki, Structures and optical properties of defects correlated with photo-inducedrefractive index changes in Ge-doped SiO2 glass, DEFECT DIFF, 177-1, 2000, pp. 43-50
Citations number
59
Categorie Soggetti
Current Book Contents
Journal title
DEFECTS AND DIFFUSION IN CERAMICS: AN ANNUAL RETROSPECTIVE II → ACNP
ISSN journal
10120386
Volume
177-1
Year of publication
2000
Pages
43 - 50
Database
ISI
SICI code
1012-0386(2000)177-1:<43:SAOPOD>2.0.ZU;2-D
Abstract
Photosensitivity of Ge-doped SiO2 glass is closely related to defect format ion with ultraviolet photon irradiation. In the present paper, optical prop erties of Ge oxygen deficient centers, which are involved in the defect for mation, are reviewed. Furthermore, structures and generation mechanisms of the photo-induced defects are discussed.