The deposition of Group 6A-derived inorganic semiconductor films as studied by quartz crystal microgravimetry

Citation
N. Myung et al., The deposition of Group 6A-derived inorganic semiconductor films as studied by quartz crystal microgravimetry, ELECTR ACT, 45(22-23), 2000, pp. 3749-3756
Citations number
44
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
ELECTROCHIMICA ACTA
ISSN journal
00134686 → ACNP
Volume
45
Issue
22-23
Year of publication
2000
Pages
3749 - 3756
Database
ISI
SICI code
0013-4686(2000)45:22-23<3749:TDOG6I>2.0.ZU;2-R
Abstract
This paper focuses on the use of QCM for the study of semiconductor film de position processes. Specifically the electrosynthesis of metal chalcogenide s (In2S3, CdS, and CdTe) is considered. A brief background is first given f or electrodeposition as a process candidate for semiconductor film preparat ion. Previous studies are reviewed on the use of QCM (and specifically EQCM ) in this area. New combined voltammetry-EQCM data are presented for the ox idative deposition of sulfur on polycrystalline Au surfaces from alkaline s ulfide baths. The anodic growth of CdS films and the cathodic electrosynthe sis of In2S3 are studied by the combined approach. Finally, data are presen ted on the cathodic electrosynthesis of CdTe films using EQCM in a rotating disc electrode (RDE) configuration. From an instrumental perspective, the presented data illustrate the virtues of combining the QCM technique with c yclic voltammetry, coulometry, and hydrodynamic (RDE) voltammetry for studi es of semiconductor film deposition. (C) 2000 Elsevier Science Ltd. All rig hts reserved.