Temperature dependence of gain saturation in multilevel quantum dot lasers

Citation
G. Park et al., Temperature dependence of gain saturation in multilevel quantum dot lasers, IEEE J Q EL, 36(9), 2000, pp. 1065-1071
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
IEEE JOURNAL OF QUANTUM ELECTRONICS
ISSN journal
00189197 → ACNP
Volume
36
Issue
9
Year of publication
2000
Pages
1065 - 1071
Database
ISI
SICI code
0018-9197(200009)36:9<1065:TDOGSI>2.0.ZU;2-W
Abstract
The temperature dependence of quantum dot (QD) optical gain is analyzed usi ng a multilevel model and compared with experiment. The maximum gain is fou nd to have a surprisingly strong temperature dependence that causes level s witching and can limit laser performance in QD lasers. The model based on m ultiple discrete levels elucidates general design criteria that should be s atisfied to obtain a stable threshold versus temperature in QD lasers. Good agreement is obtained between calculations and experiment for level switch ing in 1.3-mu m QD lasers.