Er-doped Al2O3 thin films have been deposited by reactive co-sputtering ont
o thermally oxidized Si-wafers. The deposition process has been optimized w
ith respect to the requirements originating from the application of these m
ultilayer structures as integrated optical amplifiers for the third telecom
window, i.e., the wavelength range 1.52-1.56 mu m. The films obtained at a
substrate temperature of only 400 degrees C are amorphous and show a homog
enous structure, without columns or grains. For slabguides, background loss
es smaller than 0.25 dB/cm have been obtained, even without any annealing.
A relatively broad luminescence band, having an FWHM of similar to 55 nm ar
ound the 1.533-mu m wavelength, has been measured. From gain versus pumping
power curves, an upconversion coefficient lower then 20.10(-25) m(3)/s has
been derived, being half of the values reported up to now in the literatur
e. Simulations based on experimentally determined material parameters and a
ssuming a channel attenuation of 0.5 dB/cm indicate, for 0.24 at.% Er chann
el devices with an optimal channel length of 7.7 cm, an amplification of 8
dB at 1.533 mu m for a pump wavelength of 1.48 mu m, and a pump power of on
ly 8.7 mW.