Simulation of direct tunneling through stacked gate dielectrics by a fullyintegrated 1D-Schrodinger-Poisson solver

We compare the numerical results for electron direct tunneling currents for single gate oxides, ON- and ONO-structures. We demonstrate that stacked di electrics can keep the tunneling currents a few orders of magnitude lower t han electrostatically equivalent single oxides. We also discuss the impact of gate material and of the modeling of electron transport in silicon.