We investigate the intrinsic current fluctuations in small Si-MOSFETs via t
he Monte Carlo device simulation. It is demonstrated that the temporal fluc
tuation of the drain current in Si-MOSFETs attains a significant fraction o
f the averaged drain current when the device width is scaled down to the de
ep sub-mu m regime. This is caused by the drastic decrease in the number of
channel electrons. This finding holds true whenever the device width is re
duced to deep sub-mu m, regardless of the channel length. Most importantly,
current fluctuation is associated with the quasi-equilibrium thermal noise
in the heavily-doped source and drain regions, whereas its magnitude with
respect to the averaged drain current is directly related to the number of
channel electrons underneath the gate.