RF analysis methodology for Si and SiGeFETs based on transient Monte Carlosimulation

Authors
Roy, S Kaya, S Asenov, A Barker, JR
Citation
S. Roy et al., RF analysis methodology for Si and SiGeFETs based on transient Monte Carlosimulation, IEICE TR EL, E83C(8), 2000, pp. 1224-1227
Citations number
9
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEICE TRANSACTIONS ON ELECTRONICS
ISSN journal
09168524 → ACNP
Volume
E83C
Issue
8
Year of publication
2000
Pages
1224 - 1227
Database
ISI
SICI code
0916-8524(200008)E83C:8<1224:RAMFSA>2.0.ZU;2-T
Abstract
A comprehensive analysis methodology allowing investigation of the RF perfo rmance of Si and strained Si:SiGe MOSFETs is presented. It is based on tran sient ensemble Monte Carlo simulation which correctly describes device tran sport, and employs a finite element solver to account for complex device ge ometries. Transfer characteristics and figures of merit for a number of exi sting and proposed RF MOSFETs are discussed.