A BSIM3v3 and DFIM* based ferroelectric field effect transistor model

Authors
Ullmann, M Goebel, H Hoenigschmid, H Haneder, T
Citation
M. Ullmann et al., A BSIM3v3 and DFIM* based ferroelectric field effect transistor model, IEICE TR EL, E83C(8), 2000, pp. 1324-1330
Citations number
11
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEICE TRANSACTIONS ON ELECTRONICS
ISSN journal
09168524 → ACNP
Volume
E83C
Issue
8
Year of publication
2000
Pages
1324 - 1330
Database
ISI
SICI code
0916-8524(200008)E83C:8<1324:ABADBF>2.0.ZU;2-P
Abstract
A BSIM3v3 based ferroelectric memory field effect transistor (FEMFET) compa ct model for circuit simulation is presented. Its analytical approach is ba sed on the MOS capacitor equations taking into account the influence of a f erroelectric polarization. The hysteresis behavior of the gate ferroelectri c has been modeled qv using the distribution function integral method (DFIM ). The parameters for the presented simulations were extracted by measureme nts on MIS and MFIS structures.