Cd1+xZnxSe thin film electrodes: an electrochemical photovoltaic study

Citation
Ds. Sutrave et al., Cd1+xZnxSe thin film electrodes: an electrochemical photovoltaic study, INT J ELECT, 87(10), 2000, pp. 1177-1186
Citations number
21
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
INTERNATIONAL JOURNAL OF ELECTRONICS
ISSN journal
00207217 → ACNP
Volume
87
Issue
10
Year of publication
2000
Pages
1177 - 1186
Database
ISI
SICI code
0020-7217(200010)87:10<1177:CTFEAE>2.0.ZU;2-C
Abstract
The interface between an n-Cd1+xZnxSe semiconductor and an electrolyte redo x couple is investigated through the capacitance-voltage, current-voltage a nd photovoltaic characteristics. A brief discussion is made on the properti es of a semiconductor/electrolyte Schottky barrier with reference to the ex periments performed. The observed results of the capacitance-voltage measur ements in the dark are compared with the photovoltage measurements. The dep endence of the dark current on the dark voltage for both forward and revers e bias is examined and explained. It is probable that the current-voltage c haracteristics are determined by the electrochemical kinetics in addition t o the diode rectifier theory. The measurements of photovoltaic properties s how a significant improvement in the cell performance after addition of Zn to CdSe (optimum at x = 0.3).