The interface between an n-Cd1+xZnxSe semiconductor and an electrolyte redo
x couple is investigated through the capacitance-voltage, current-voltage a
nd photovoltaic characteristics. A brief discussion is made on the properti
es of a semiconductor/electrolyte Schottky barrier with reference to the ex
periments performed. The observed results of the capacitance-voltage measur
ements in the dark are compared with the photovoltage measurements. The dep
endence of the dark current on the dark voltage for both forward and revers
e bias is examined and explained. It is probable that the current-voltage c
haracteristics are determined by the electrochemical kinetics in addition t
o the diode rectifier theory. The measurements of photovoltaic properties s
how a significant improvement in the cell performance after addition of Zn
to CdSe (optimum at x = 0.3).