Single transistor primitive for timing and power modelling of CMOS gates

Citation
A. Chatzigeorgiou et S. Nikolaidis, Single transistor primitive for timing and power modelling of CMOS gates, INT J ELECT, 87(10), 2000, pp. 1227-1238
Citations number
15
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
INTERNATIONAL JOURNAL OF ELECTRONICS
ISSN journal
00207217 → ACNP
Volume
87
Issue
10
Year of publication
2000
Pages
1227 - 1238
Database
ISI
SICI code
0020-7217(200010)87:10<1227:STPFTA>2.0.ZU;2-R
Abstract
An accurate and efficient method for modelling CMOS gates by a single equiv alent transistor is introduced in this paper. The output waveform of a CMOS inverter is obtained by solving the circuit differential equation consider ing only the conducting transistor of the inverter. The effect of the short -circuiting transistor is incorporated as a differentiation of the width of the conducting transistor. The proposed model is the simplest primitive th at can be used in order to obtain the propagation delay and short-circuit p ower dissipation of CMOS gates. Consequently, it can offer significant spee d improvement to existing dynamic timing and power simulators while maintai ning a sufficient level of accuracy.