Hole polarons in pure BaTiO3 studied by computer modeling

Citation
A. Stashans et H. Pinto, Hole polarons in pure BaTiO3 studied by computer modeling, INT J QUANT, 79(6), 2000, pp. 358-366
Citations number
50
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
INTERNATIONAL JOURNAL OF QUANTUM CHEMISTRY
ISSN journal
00207608 → ACNP
Volume
79
Issue
6
Year of publication
2000
Pages
358 - 366
Database
ISI
SICI code
0020-7608(20000920)79:6<358:HPIPBS>2.0.ZU;2-P
Abstract
Self-trapped hole polarons in technologically important perovskite-type cer amic of BaTiO3 have been modeled by means of the quantum chemical method mo dified for crystal calculations. The computations are carried out in the se lf-consistent field (SCF) manner using the embedded molecular cluster model . The spatial configuration of a hole polaron, displacement of defect-surro unding atoms, and wave functions of the polaron ground and excited states a re obtained and analyzed. The probability of spontaneous hole self-trapping is estimated in the perfect lattice of the BaTiO3 crystal by calculating t he value of the hole self-trapping energy as a difference of the atomic rel axation energy and the hole localization energy. This value is found to be negative, -1.49 eV, which demonstrates the preference of the self-trapped p olaron state. The calculated polaron absorption energy, 0.5 eV, is discusse d in light of the available experimental data. (C) 2000 John Wiley & Sons, Inc.