The electro-optic properties of interdiffused InGaAs/InP quantum well structures

We present a model for the optical properties of interdiffused InGaAs/InP q uantum well structures. The structure is investigated in a two-phase group V interdiffusion that is characterized by three parameters: the interdiffus ion coefficient in the barrier layer, the well layer, and the concentration ratio of diffused species at the well/barrier interface. The quantum confi ned Stark effect is considered including the exciton and full subband under an applied electric field. Results show interesting optical properties for the TE and TM polarization and a tunable operation wavelength near 1.55 mu m for modulators. (C) 2000 American Institute of Physics. [S0021-8979(00)0 0609-5].