Surface recombination coefficients of O and N radicals in pure O-2 and N-2
plasmas, respectively, have been estimated on the stainless steel walls of
a low-pressure inductively coupled plasma reactor. The recombination coeffi
cients are estimated using a steady state plasma model describing the balan
ce between the volume generation of the radicals from electron-impact disso
ciation of the parent molecules, and the loss of the radicals due to surfac
e recombination. The model uses radical and parent molecule number densitie
s and the electron energy distribution function (EEDF) as input parameters.
We have measured the radical number density using appearance potential mas
s spectrometry. The parent neutral number density is measured using mass sp
ectrometry. The EEDF is measured using a Langmuir probe. The recombination
coefficient of O radicals on stainless steel walls at approximately 330 K i
s estimated to be 0.17 +/- 0.02, and agrees well with previous measurements
. The recombination coefficient of N radicals is estimated to be 0.07 +/- 0
.02 on stainless steel at 330 K. (C) 2000 American Institute of Physics. [S
0021-8979(00)00519-3].