Estimating the noise parameters of microwave transistors

Authors
Balyko, AK Vasil'ev, VI Gusel'nikov, NA Morozov, VS Lomova, NS Yusupova, NI
Citation
Ak. Balyko et al., Estimating the noise parameters of microwave transistors, J COMMUN T, 45(8), 2000, pp. 905-910
Citations number
6
Categorie Soggetti
Information Tecnology & Communication Systems
Journal title
JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS
ISSN journal
10642269 → ACNP
Volume
45
Issue
8
Year of publication
2000
Pages
905 - 910
Database
ISI
SICI code
1064-2269(200008)45:8<905:ETNPOM>2.0.ZU;2-R
Abstract
A method of estimating the noise parameters of microwave transistors is pre sented. The parameters are estimated from the values of the admittance (or impedance) of an external noise source and the respective noise figures of the transistor, all of the quantities being measured at the same frequency. The application of the method to a field-effect transistor (FET) is report ed.