On void engulfment in shaped sapphire crystals using 3D modelling

Authors
Nicoara, I Vizman, D Friedrich, J
Citation
I. Nicoara et al., On void engulfment in shaped sapphire crystals using 3D modelling, J CRYST GR, 218(1), 2000, pp. 74-80
Citations number
37
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
218
Issue
1
Year of publication
2000
Pages
74 - 80
Database
ISI
SICI code
0022-0248(200009)218:1<74:OVEISS>2.0.ZU;2-G
Abstract
The characteristics of the melt flow in the meniscus in edge-defined film-f ed growth have been studied using a 3-D model. The influence of the growth conditions (pulling rates and ambient temperature distribution) on the void distribution in rod sapphire crystals has been studied modeling the melt f low in the meniscus. The flow behavior obtained can explain the observed vo id distribution. (C) 2000 Elsevier Science B.V. All rights reserved.