Low-dislocation relaxed SiGe grown on an effective compliant substrate

An effective compliant substrate was successfully fabricated for growth of high quality relaxed SiGe templates. The compliant substrate was fabricated by synthesizing a 20% B2O3 concentration borosilicate glass in the silicon on insulator wafers through boron and oxygen implantation followed by high temperature annealing. Substrates with 5%, 10% and 20% B2O3 were used for 150 nm Si0.75Ge0.25 epitaxy. Double-axis x-ray diffraction measurements det ermined the relaxation and composition of the Si,,Ge, layers. Cross-section al transmission electron microscopy was used to observe the lattice of the SiGe epilayer and the Si substrate, dislocation density and distribution. R aman spectroscopy was combined with step etching to measure the samples. Fo r 20% BSG sample, the strain in the thin Si layer was calculated from the R aman shift and it matched the results from DAXRD very well. The density of threading dislocation on the surface of 500 nm Si0.75Ge0.25 layers was 2 x 10(4) cm(-2) for the sample on the 20% borosilicate glass substrate. This m ethod is promising to prepare effective compliant substrate for low-disloca tion relaxed SiGe growth.