The radial uniformity of Zn concentration in 4 in. CdZnTe crystals was impr
oved by keeping uniform temperature distribution in the VGF furnace. The ma
ximum temperature difference at the outside of crucible in radial direction
was reduced to less than 1. The size of voids observed outside of the crys
tals became small and the distribution has become well-uniformed. To evalua
te the Zn uniformity, a new NIR (Near Infrared) instrument was developed us
ing the diode array type spectrometer. The NIR spectra were analyzed by C.D
. Maxey et al.'s(1) method. The Zn concentration in 4 in. CdZnTe substrates
grown by modified furnace was more uniform than that of the conventional s
ubstrates.