Evaluation of Zn uniformity in CdZnTe substrates

Citation
R. Hirano et al., Evaluation of Zn uniformity in CdZnTe substrates, J ELEC MAT, 29(6), 2000, pp. 654-656
Citations number
3
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF ELECTRONIC MATERIALS
ISSN journal
03615235 → ACNP
Volume
29
Issue
6
Year of publication
2000
Pages
654 - 656
Database
ISI
SICI code
0361-5235(200006)29:6<654:EOZUIC>2.0.ZU;2-I
Abstract
The radial uniformity of Zn concentration in 4 in. CdZnTe crystals was impr oved by keeping uniform temperature distribution in the VGF furnace. The ma ximum temperature difference at the outside of crucible in radial direction was reduced to less than 1. The size of voids observed outside of the crys tals became small and the distribution has become well-uniformed. To evalua te the Zn uniformity, a new NIR (Near Infrared) instrument was developed us ing the diode array type spectrometer. The NIR spectra were analyzed by C.D . Maxey et al.'s(1) method. The Zn concentration in 4 in. CdZnTe substrates grown by modified furnace was more uniform than that of the conventional s ubstrates.