Critical thickness in the HgCdTe/CdZnTe system

Authors
Berding, MA Nix, WD Rhiger, DR Sen, S Sher, A
Citation
Ma. Berding et al., Critical thickness in the HgCdTe/CdZnTe system, J ELEC MAT, 29(6), 2000, pp. 676-679
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF ELECTRONIC MATERIALS
ISSN journal
03615235 → ACNP
Volume
29
Issue
6
Year of publication
2000
Pages
676 - 679
Database
ISI
SICI code
0361-5235(200006)29:6<676:CTITHS>2.0.ZU;2-7
Abstract
We present an analysis of the critical thickness of Hg1-xCdxTe on Cd1-yZnyT e substrates as a function of x and y and show that a very tight control of the substrate composition is needed to produce dislocation-free epi-layers . Hg1-xCdxTe layers on relaxed underlayers of different compositions of Hg are also examined.