ZnS-based visible-blind UV detectors: Effects of isoelectronic traps

The aim of this study is to reveal the underlying cause of the gradual turn -on characteristic of low Te containing ZnSTe Schottky barrier photodiodes. The results of photoresponse studies on ZnS, ZnSSe and ZnSTe diodes indica te that the Te isoelectronic trapping effect is responsible for the gradual turn-on characteristic of low Te containing ZnSTe Schottky barrier photodi odes. The results also reveal that the ZnSSe diode, having the advantage of being free of isoelectronic centers, is a more suitable choice for applica tions requiring high visible rejection power. It is demonstrated that highl y UV sensitive responsivity with an abrupt long wavelength cutoff tailored to lie between 340-400 nm can be achieved in the ZnSSe diode system.