A series of n-type, indium-doped Hg1-xCdxTe (x similar to 0.225) layers wer
e grown on Cd0.96Zn0.04Te(311)B substrates by molecular beam epitaxy (MBE).
The Cd0.96Zn0.04Te(311)B substrates (2 cm x 3 cm) were prepared in this la
boratory by the horizontal Bridgman method using double-zone-refined 6N sou
rce materials. The Hg1-xCdxTe(311)B epitaxial films were examined by optica
l microscopy, defect etching, and Hall measurements. Preliminary results in
dicate that the n-type Hg1-4CdxTe(311)B and Hg1.xCdxTe(211)B films (x simil
ar to 0.225) grown by MBE have comparable morphological, structural, and el
ectrical quality, with the best 77 K Hall mobility being 112,000 cm(2)/.Vse
c at carrier concentration of 1.9 x 10(+15) cm(-3).