Molecular beam epitaxial growth of HgCdTe on CdZnTe(311)B

Citation
F. Aqariden et al., Molecular beam epitaxial growth of HgCdTe on CdZnTe(311)B, J ELEC MAT, 29(6), 2000, pp. 727-728
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF ELECTRONIC MATERIALS
ISSN journal
03615235 → ACNP
Volume
29
Issue
6
Year of publication
2000
Pages
727 - 728
Database
ISI
SICI code
0361-5235(200006)29:6<727:MBEGOH>2.0.ZU;2-M
Abstract
A series of n-type, indium-doped Hg1-xCdxTe (x similar to 0.225) layers wer e grown on Cd0.96Zn0.04Te(311)B substrates by molecular beam epitaxy (MBE). The Cd0.96Zn0.04Te(311)B substrates (2 cm x 3 cm) were prepared in this la boratory by the horizontal Bridgman method using double-zone-refined 6N sou rce materials. The Hg1-xCdxTe(311)B epitaxial films were examined by optica l microscopy, defect etching, and Hall measurements. Preliminary results in dicate that the n-type Hg1-4CdxTe(311)B and Hg1.xCdxTe(211)B films (x simil ar to 0.225) grown by MBE have comparable morphological, structural, and el ectrical quality, with the best 77 K Hall mobility being 112,000 cm(2)/.Vse c at carrier concentration of 1.9 x 10(+15) cm(-3).