Electron beam induced current study of ion beam milling type conversion inmolecular beam epitaxy vacancy-doped CdxHg1-xTe

Ion milling has been used to type convert molecular beam epitaxy vacancy-do ped CdxHg1-xTe, and electron beam induced current measurements have been pe rformed to study the pn-junction depth dependence on milling time, milling current and vacancy concentration. The junction depth seems to initially in crease linearly with time for depths up to similar to 4 mu m, then possibly as the square root of time at larger depth. For given x, the depth increas es with decreasing vacancy concentration. For the same annealing temperatur e, high x samples have lower earlier concentration and greater junction dep th than low x samples. Up to 4 mu m, junction depth is proportional to mill ing current density as well as milling time.