GaAs-based 1.3 mu m InGaAs quantum dot lasers: A status report

We review the present status of InGaAs quantum dot lasers on GaAs sub-strat es emitting near and at 1.3 mu m. Such lasers are shown to be extremely pro mising for cost-efficient commercial applications in optical fiber communic ation. Threshold current densities a low as similar to 20 Acm(-2) per QD sh eet are achieved. Room temperature continuous wave operation at 2.7 W for b road stripe devices is demonstrated. The maximum differential efficiency am ounts to 57%. Moreover, single lateral made continuous wave operation with a maximum output power of 110 mW is realized. Prospects for 1.3 mu m GaAs-b ased vertical cavity surface emitting lasers are given. We also show that t he longest wavelength of QD GaAs-based light emitting devices can be potent ially extended to 1.7 mu m.