InGaAs-GaAs quantum dots for application in long wavelength (1.3 mu m) resonant vertical cavity enhanced devices

Microcavity structures containing InGaAs-GaAs quantum dots (QDs) emitting a t 1.3 mu m at 300 K have been studied. The energy distribution of excitons remains a nonequilibrium one up to room temperature due to high localizatio n energies in these QDs. Carrier relaxation is found to proceed mainly via multiphonon processes. The luminescence emission from QDs in a microcavity exhibits a large spectral splitting of TE and TM components as observed in angle-resolved measurements amounting up to 10 nm for an angle of incidence of 30 degrees. A 1.3 mu m vertical cavity enhanced QD photodetector based on a single sheet of QDs is shown to have a quantum efficiency >10%. The gr ound state electroluminescence of a quantum dot resonant cavity light emitt ing diode shows no saturation up to 2 kAcm(-2).