Effects of growth interruption on the evolution of InAs/InP self-assembledquantum dots

We investigated the change in the structural and optical properties of InAs /lnP quantum structures during growth interruption (GI) for various times a nd under various atmospheres in metalorganic chemical vapor deposition. Und er AsH3 + H-2 atmosphere, the mass transport for the 2D-to-3D transition wa s observed during the GI. Photoluminescence peaks from both quantum dots (Q Ds) and quantum wells were observed from the premature QD samples. The full y developed QDs showed the two distinct temperature regimes in the PL peak position, full width at half maximum (FWHM) and wavelength-integrated peak intensity. The two characteristic activation energies were obtained from th e InAs/InP QDs: similar to 10 meV for intra-dot excitation and 90 similar t o 110 meV for the excitation out of the dots, respectively. It was also obs erved that the QD evolution kinetics could be suppressed in PH3 + H-2 and H -2 atmospheres. The proper control of GI time and atmosphere might be a use ful tool to further improve the properties of QDs.